RM5N800LD

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Overview of RM5N800LD

Part NumberRM5N800LD
ManufacturerRectron USA
DescriptionMOSFET N-CHANNEL 800V 5A TO252-2
DatasheetsDownload RM5N800LD Datasheet PDFPDF Icon
Price for RM5N800LD

Specification of RM5N800LD

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
81W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-2
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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