RM90N30LD

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Overview of RM90N30LD

Part NumberRM90N30LD
ManufacturerRectron USA
DescriptionMOSFET N-CHANNEL 30V 90A TO252-2
Price for RM90N30LD

Specification of RM90N30LD

Status
Active
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
105W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-2
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)
30V
Gate Charge (Qg) (Max) @ Vgs
60nC @ 30V
Input Capacitance (Ciss) (Max) @ Vds
3433pF @ 15V

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