RN1117(TE85L,F)

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Overview of RN1117(TE85L,F)

Part NumberRN1117(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS NPN 50V 0.1A SSM
DatasheetsDownload RN1117(TE85L,F) Datasheet PDFPDF Icon
Price for RN1117(TE85L,F)

Specification of RN1117(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM

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