RN1131MFV,L3F

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Overview of RN1131MFV,L3F

Part NumberRN1131MFV,L3F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS NPN 50V 0.1A VESM
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Price for RN1131MFV,L3F

Specification of RN1131MFV,L3F

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
-
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM

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