RN1313,LF

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Overview of RN1313,LF

Part NumberRN1313,LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F BIAS RESISTOR BUILT-IN TRAN
DatasheetsDownload RN1313,LF Datasheet PDFPDF Icon
Price for RN1313,LF

Specification of RN1313,LF

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
USM

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