RN1412TE85LF

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Overview of RN1412TE85LF

Part NumberRN1412TE85LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS NPN 50V 0.1A SMINI
DatasheetsDownload RN1412TE85LF Datasheet PDFPDF Icon
Price for RN1412TE85LF

Specification of RN1412TE85LF

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini

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