RN1444ATE85LF

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Overview of RN1444ATE85LF

Part NumberRN1444ATE85LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS NPN 20V 0.3A SMINI
DatasheetsDownload RN1444ATE85LF Datasheet PDFPDF Icon
Price for RN1444ATE85LF

Specification of RN1444ATE85LF

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
20 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
30 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini

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