RN1510(TE85L,F)

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Overview of RN1510(TE85L,F)

Part NumberRN1510(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN PREBIAS 0.3W SMV
DatasheetsDownload RN1510(TE85L,F) Datasheet PDFPDF Icon
Price for RN1510(TE85L,F)

Specification of RN1510(TE85L,F)

Status
Active
Package
Cut Tape (CT)
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV

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