RN1711JE(TE85L,F)

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Overview of RN1711JE(TE85L,F)

Part NumberRN1711JE(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANSISTOR NPN X2 BRT Q1BSR10KOH
DatasheetsDownload RN1711JE(TE85L,F) Datasheet PDFPDF Icon
Price for RN1711JE(TE85L,F)

Specification of RN1711JE(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV

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