RN1970FE(TE85L,F)

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Overview of RN1970FE(TE85L,F)

Part NumberRN1970FE(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2NPN PREBIAS 0.1W ES6
DatasheetsDownload RN1970FE(TE85L,F) Datasheet PDFPDF Icon
Price for RN1970FE(TE85L,F)

Specification of RN1970FE(TE85L,F)

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6

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