RN2107MFV,L3F(CT

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Overview of RN2107MFV,L3F(CT

Part NumberRN2107MFV,L3F(CT
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS PREBIAS PNP 50V 0.1A VESM
DatasheetsDownload RN2107MFV,L3F(CT Datasheet PDFPDF Icon
Price for RN2107MFV,L3F(CT

Specification of RN2107MFV,L3F(CT

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500A, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM

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