RN2713JE(TE85L,F)

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Overview of RN2713JE(TE85L,F)

Part NumberRN2713JE(TE85L,F)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionTRANS 2PNP PREBIAS 0.1W ESV
DatasheetsDownload RN2713JE(TE85L,F) Datasheet PDFPDF Icon
Price for RN2713JE(TE85L,F)

Specification of RN2713JE(TE85L,F)

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250A, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV

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