RQ3E150GNTB

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Overview of RQ3E150GNTB

Part NumberRQ3E150GNTB
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 30V 15A 8HSMT
DatasheetsDownload RQ3E150GNTB Datasheet PDFPDF Icon
Price for RQ3E150GNTB

Specification of RQ3E150GNTB

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 17.2W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN

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