RQ6E030ATTCR

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Overview of RQ6E030ATTCR

Part NumberRQ6E030ATTCR
ManufacturerROHM Semiconductor
DescriptionMOSFET P-CH 30V 3A TSMT6
DatasheetsDownload RQ6E030ATTCR Datasheet PDFPDF Icon
Price for RQ6E030ATTCR

Specification of RQ6E030ATTCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
91mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TSMT6 (SC-95)
Package / Case
SOT-23-6 Thin, TSOT-23-6

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