RQA0002DNSTB-E

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Overview of RQA0002DNSTB-E

Part NumberRQA0002DNSTB-E
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 16V 3.8A 2HWSON
DatasheetsDownload RQA0002DNSTB-E Datasheet PDFPDF Icon
Price for RQA0002DNSTB-E

Specification of RQA0002DNSTB-E

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Renesas Electronics America Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25C
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
750mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
5V
Input Capacitance (Ciss) (Max) @ Vds
102 pF @ 0 V
FET Feature
-
Power Dissipation (Max)
15W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
2-HWSON (5x4)
Package / Case
2-DFN Exposed Pad

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