RS1E350GNTB

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Overview of RS1E350GNTB

Part NumberRS1E350GNTB
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 30V 35A/80A 8HSOP
DatasheetsDownload RS1E350GNTB Datasheet PDFPDF Icon
Price for RS1E350GNTB

Specification of RS1E350GNTB

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
35A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4060 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN

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