RS6P060BHTB1

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Overview of RS6P060BHTB1

Part NumberRS6P060BHTB1
ManufacturerROHM Semiconductor
DescriptionNCH 100V 60A, HSOP8, POWER MOSFE
DatasheetsDownload RS6P060BHTB1 Datasheet PDFPDF Icon
Price for RS6P060BHTB1

Specification of RS6P060BHTB1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
10.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 73W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN

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