RSJ10HN06TL

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Overview of RSJ10HN06TL

Part NumberRSJ10HN06TL
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 60V 100A LPTS
DatasheetsDownload RSJ10HN06TL Datasheet PDFPDF Icon
Price for RSJ10HN06TL

Specification of RSJ10HN06TL

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
202 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LPTS
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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