RUU002N05T106

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Overview of RUU002N05T106

Part NumberRUU002N05T106
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 50V 200MA UMT3
DatasheetsDownload RUU002N05T106 Datasheet PDFPDF Icon
Price for RUU002N05T106

Specification of RUU002N05T106

Status
Not For New Designs
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UMT3
Package / Case
SC-70, SOT-323

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