RX3R10BBHC16

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Overview of RX3R10BBHC16

Part NumberRX3R10BBHC16
ManufacturerROHM Semiconductor
DescriptionNCH 150V 105A, TO-220AB, POWER M
DatasheetsDownload RX3R10BBHC16 Datasheet PDFPDF Icon
Price for RX3R10BBHC16

Specification of RX3R10BBHC16

Status
Active
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7550 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
181W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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