S2M0080120D

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Overview of S2M0080120D

Part NumberS2M0080120D
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
DatasheetsDownload S2M0080120D Datasheet PDFPDF Icon
Price for S2M0080120D

Specification of S2M0080120D

Status
Active
Package
Tube
Supplier
SMC Diode Solutions
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1324 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3

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