SCT1000N170

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Overview of SCT1000N170

Part NumberSCT1000N170
ManufacturerSTMicroelectronics
DescriptionHIP247 IN LINE
DatasheetsDownload SCT1000N170 Datasheet PDFPDF Icon
Price for SCT1000N170

Specification of SCT1000N170

Status
Active
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 3A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13.3 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
133 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247
Package / Case
TO-247-3

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