SCT2450KEGC11

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Overview of SCT2450KEGC11

Part NumberSCT2450KEGC11
ManufacturerROHM Semiconductor
Description1200V, 10A, THD, SILICON-CARBIDE
DatasheetsDownload SCT2450KEGC11 Datasheet PDFPDF Icon
Price for SCT2450KEGC11

Specification of SCT2450KEGC11

Status
Active
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id
4V @ 900A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
463 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
175C
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3

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