SCT3040KRC14

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Overview of SCT3040KRC14

Part NumberSCT3040KRC14
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 1200V 55A TO247-4L
DatasheetsDownload SCT3040KRC14 Datasheet PDFPDF Icon
Price for SCT3040KRC14

Specification of SCT3040KRC14

Status
Active
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1337 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
262W
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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