SCT3160KLGC11

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Overview of SCT3160KLGC11

Part NumberSCT3160KLGC11
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 1200V 17A TO247N
DatasheetsDownload SCT3160KLGC11 Datasheet PDFPDF Icon
Price for SCT3160KLGC11

Specification of SCT3160KLGC11

Status
Active
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id
5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
398 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
103W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3

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