SCTWA90N65G2V-4

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Overview of SCTWA90N65G2V-4

Part NumberSCTWA90N65G2V-4
ManufacturerSTMicroelectronics
DescriptionTRANS SJT N-CH 650V 119A HIP247
DatasheetsDownload SCTWA90N65G2V-4 Datasheet PDFPDF Icon
Price for SCTWA90N65G2V-4

Specification of SCTWA90N65G2V-4

Status
Active
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
565W (Tc)
Operating Temperature
-55C ~ 200C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247 Long Leads
Package / Case
TO-247-3

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