SDT10S60

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Overview of SDT10S60

Part NumberSDT10S60
ManufacturerInfineon Technologies
DescriptionDIODE SIL CARB 600V 10A TO220-2
DatasheetsDownload SDT10S60 Datasheet PDFPDF Icon
Price for SDT10S60

Specification of SDT10S60

Status
Obsolete
Series
CoolSiC™+
Package
Tube
Supplier
Infineon Technologies
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
350 A @ 600 V
Capacitance @ Vr, F
350pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
PG-TO220-2-2
Operating Temperature - Junction
-55C ~ 175C

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