SGS10N60RUFDTU

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Overview of SGS10N60RUFDTU

Part NumberSGS10N60RUFDTU
ManufacturerFairchild Semiconductor
DescriptionINSULATED GATE BIPOLAR TRANSISTO
DatasheetsDownload SGS10N60RUFDTU Datasheet PDFPDF Icon
Price for SGS10N60RUFDTU

Specification of SGS10N60RUFDTU

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
16 A
Current - Collector Pulsed (Icm)
30 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 10A
Power - Max
55 W
Switching Energy
141J (on), 215J (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25C
15ns/36ns
Test Condition
300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr)
60 ns
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F-3

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