SI1012X-T1-E3

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Overview of SI1012X-T1-E3

Part NumberSI1012X-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 500MA SC89-3
Price for SI1012X-T1-E3

Specification of SI1012X-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.75 nC @ 4.5 V
Vgs (Max)
6V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
250mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89-3
Package / Case
SC-89, SOT-490

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