SI1016X-T1-GE3

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Overview of SI1016X-T1-GE3

Part NumberSI1016X-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 20V SC89-6
DatasheetsDownload SI1016X-T1-GE3 Datasheet PDFPDF Icon
Price for SI1016X-T1-GE3

Specification of SI1016X-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
485mA, 370mA
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
250mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89 (SOT-563F)

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