SI1022R-T1-GE3

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Overview of SI1022R-T1-GE3

Part NumberSI1022R-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V 330MA SC75A
Price for SI1022R-T1-GE3

Specification of SI1022R-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-75A
Package / Case
SC-75, SOT-416

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