SI1039X-T1-GE3

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Overview of SI1039X-T1-GE3

Part NumberSI1039X-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 12V 870MA SC89-6
Price for SI1039X-T1-GE3

Specification of SI1039X-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
165mOhm @ 870mA, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
170mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89 (SOT-563F)
Package / Case
SOT-563, SOT-666

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