SI1077X-T1-GE3

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Overview of SI1077X-T1-GE3

Part NumberSI1077X-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 20V SC89-6
DatasheetsDownload SI1077X-T1-GE3 Datasheet PDFPDF Icon
Price for SI1077X-T1-GE3

Specification of SI1077X-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
1.75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
78mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
31.1 nC @ 8 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
965 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
330mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-89 (SOT-563F)
Package / Case
SOT-563, SOT-666

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