SI1300BDL-T1-E3

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Overview of SI1300BDL-T1-E3

Part NumberSI1300BDL-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 400MA SC70-3
DatasheetsDownload SI1300BDL-T1-E3 Datasheet PDFPDF Icon
Price for SI1300BDL-T1-E3

Specification of SI1300BDL-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
850mOhm @ 250mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
0.84 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
35 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
190mW (Ta), 200mW (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-3
Package / Case
SC-70, SOT-323

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