SI1450DH-T1-GE3

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Overview of SI1450DH-T1-GE3

Part NumberSI1450DH-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 8V 4.53A/6.04A SC70
DatasheetsDownload SI1450DH-T1-GE3 Datasheet PDFPDF Icon
Price for SI1450DH-T1-GE3

Specification of SI1450DH-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25C
4.53A (Ta), 6.04A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
47mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.05 nC @ 5 V
Vgs (Max)
5V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta), 2.78W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363

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