SI1539CDL-T1-BE3

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Overview of SI1539CDL-T1-BE3

Part NumberSI1539CDL-T1-BE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 30V SOT363
DatasheetsDownload SI1539CDL-T1-BE3 Datasheet PDFPDF Icon
Price for SI1539CDL-T1-BE3

Specification of SI1539CDL-T1-BE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs
388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
28pF @ 15V, 34pF @ 15V
Power - Max
290mW (Ta), 340mW (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6

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