SI2302CDS-T1-GE3

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Overview of SI2302CDS-T1-GE3

Part NumberSI2302CDS-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 2.6A SOT23-3
DatasheetsDownload SI2302CDS-T1-GE3 Datasheet PDFPDF Icon
Price for SI2302CDS-T1-GE3

Specification of SI2302CDS-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
710mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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