SI2327DS-T1-E3

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Overview of SI2327DS-T1-E3

Part NumberSI2327DS-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 200V 380MA SOT23-3
DatasheetsDownload SI2327DS-T1-E3 Datasheet PDFPDF Icon
Price for SI2327DS-T1-E3

Specification of SI2327DS-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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