SI2356DS-T1-BE3

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Overview of SI2356DS-T1-BE3

Part NumberSI2356DS-T1-BE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 40-V (D-S) MOSFET
DatasheetsDownload SI2356DS-T1-BE3 Datasheet PDFPDF Icon
Price for SI2356DS-T1-BE3

Specification of SI2356DS-T1-BE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
3.2A (Ta), 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 1.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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