SI3127DV-T1-GE3

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Overview of SI3127DV-T1-GE3

Part NumberSI3127DV-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 60V 3.5A/13A 6TSOP
DatasheetsDownload SI3127DV-T1-GE3 Datasheet PDFPDF Icon
Price for SI3127DV-T1-GE3

Specification of SI3127DV-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
89mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
833 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 4.2W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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