SI3430DV-T1-GE3

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Overview of SI3430DV-T1-GE3

Part NumberSI3430DV-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 1.8A 6TSOP
DatasheetsDownload SI3430DV-T1-GE3 Datasheet PDFPDF Icon
Price for SI3430DV-T1-GE3

Specification of SI3430DV-T1-GE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.14W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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