SI3447DV

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Overview of SI3447DV

Part NumberSI3447DV
ManufacturerFairchild Semiconductor
DescriptionP-CHANNEL MOSFET
DatasheetsDownload SI3447DV Datasheet PDFPDF Icon
Price for SI3447DV

Specification of SI3447DV

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1926 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
800mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT-6
Package / Case
SOT-23-6 Thin, TSOT-23-6

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