SI3458BDV-T1-BE3

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Overview of SI3458BDV-T1-BE3

Part NumberSI3458BDV-T1-BE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V 3.2A/4.1A 6TSOP
Price for SI3458BDV-T1-BE3

Specification of SI3458BDV-T1-BE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
3.2A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 3.3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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