SI3993CDV-T1-GE3

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Overview of SI3993CDV-T1-GE3

Part NumberSI3993CDV-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 30V 2.9A 6-TSOP
Price for SI3993CDV-T1-GE3

Specification of SI3993CDV-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
2.9A
Rds On (Max) @ Id, Vgs
111mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
210pF @ 15V
Power - Max
1.4W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP

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