SI4190DY-T1-GE3

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Overview of SI4190DY-T1-GE3

Part NumberSI4190DY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 20A 8-SOIC
DatasheetsDownload SI4190DY-T1-GE3 Datasheet PDFPDF Icon
Price for SI4190DY-T1-GE3

Specification of SI4190DY-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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