SI4354DY-T1-E3

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Overview of SI4354DY-T1-E3

Part NumberSI4354DY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 9.5A 8SO
DatasheetsDownload SI4354DY-T1-E3 Datasheet PDFPDF Icon
Price for SI4354DY-T1-E3

Specification of SI4354DY-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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