SI4390DY-T1-E3

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Overview of SI4390DY-T1-E3

Part NumberSI4390DY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 8.5A 8SO
DatasheetsDownload SI4390DY-T1-E3 Datasheet PDFPDF Icon
Price for SI4390DY-T1-E3

Specification of SI4390DY-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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