SI4413DDY-T1-GE3

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Overview of SI4413DDY-T1-GE3

Part NumberSI4413DDY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CHANNEL 8SOIC
Price for SI4413DDY-T1-GE3

Specification of SI4413DDY-T1-GE3

Status
Active
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25C
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
4780 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 125C
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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