SI4434DY-T1-E3

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Overview of SI4434DY-T1-E3

Part NumberSI4434DY-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 250V 2.1A 8SO
DatasheetsDownload SI4434DY-T1-E3 Datasheet PDFPDF Icon
Price for SI4434DY-T1-E3

Specification of SI4434DY-T1-E3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
155mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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