SI4500BDY-T1-GE3

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Overview of SI4500BDY-T1-GE3

Part NumberSI4500BDY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 20V 6.6A 8-SOIC
Price for SI4500BDY-T1-GE3

Specification of SI4500BDY-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
6.6A, 3.8A
Rds On (Max) @ Id, Vgs
20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.3W
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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